Terahertz generation by plasma waves in nanometer gate high electron mobility transistors
Identifieur interne : 000336 ( Russie/Analysis ); précédent : 000335; suivant : 000337Terahertz generation by plasma waves in nanometer gate high electron mobility transistors
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Abstract
A resonant voltage tuneable radiation (0.4 THz-1.0 THz) from the gated two dimensional electron gas in a 60 nm InGaAs field effect transistor was investigated. We show that (i) the observed emission appears once the drain-to-source voltage, UDS, exceeds the threshold value, UTH; (ii) the resonant frequency can be tuned by UDS in agreement with the current driven plasma instability model of Dyakonov and Shur; (iii) by applying a quantizing magnetic field one increases UTH linearly with the magnetic field while the evolution of the emission signal is approximately a universal function of (UDS - UTH).
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Usakowski</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>GES, CNRS-Université Montpellier 2, UMR 5650</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName><orgName type="university">Université Montpellier 2</orgName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>IEP, University of Warsaw, Hoza 69</s1><s2>00-681 Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>00-681 Warsaw</wicri:noRegion></affiliation></author><author><name sortKey="Teppe, F" uniqKey="Teppe F">F. Teppe</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>GES, CNRS-Université Montpellier 2, UMR 5650</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName><orgName type="university">Université Montpellier 2</orgName></affiliation></author><author><name sortKey="Dyakonova, N" uniqKey="Dyakonova N">N. Dyakonova</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>GES, CNRS-Université Montpellier 2, UMR 5650</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName><orgName type="university">Université Montpellier 2</orgName></affiliation></author><author><name sortKey="Meziani, Y M" uniqKey="Meziani Y">Y. M. 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Parenty</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>IEMN-DHS, UMR CNRS 8520, Avenue Poincaré</s1><s2>59652 Villeneuve d'Acsq</s2><s3>FRA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region><settlement type="city">Villeneuve d'Acsq</settlement></placeName></affiliation></author><author><name sortKey="Bollaert, S" uniqKey="Bollaert S">S. Bollaert</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>IEMN-DHS, UMR CNRS 8520, Avenue Poincaré</s1><s2>59652 Villeneuve d'Acsq</s2><s3>FRA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region><settlement type="city">Villeneuve d'Acsq</settlement></placeName></affiliation></author><author><name sortKey="Cappy, A" uniqKey="Cappy A">A. Cappy</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>IEMN-DHS, UMR CNRS 8520, Avenue Poincaré</s1><s2>59652 Villeneuve d'Acsq</s2><s3>FRA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region><settlement type="city">Villeneuve d'Acsq</settlement></placeName></affiliation></author><author><name sortKey="Popov, V" uniqKey="Popov V">V. Popov</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>IRE, Russian Academy of Sciences</s1><s2>410019 Saratov</s2><s3>RUS</s3><sZ>9 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>410019 Saratov</wicri:noRegion></affiliation></author><author><name sortKey="Shur, M S" uniqKey="Shur M">M. S. Shur</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>ECSE Department, Rensselaer Polytechnic Institute</s1><s2>Troy, New York 12180</s2><s3>USA</s3><sZ>5 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Troy, New York 12180</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">05-0188435</idno><date when="2005">2005</date><idno type="stanalyst">PASCAL 05-0188435 INIST</idno><idno type="RBID">Pascal:05-0188435</idno><idno type="wicri:Area/Main/Corpus">00A418</idno><idno type="wicri:Area/Main/Repository">009380</idno><idno type="wicri:Area/Russie/Extraction">000336</idno></publicationStmt><seriesStmt><idno type="ISSN">0031-8965</idno><title level="j" type="abbreviated">Phys. status solidi, A, Appl. res.</title><title level="j" type="main">Physica status solidi. A. Applied research</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Field effect transistors</term><term>Gallium arsenides</term><term>High electron mobility transistors</term><term>Indium arsenides</term><term>Inorganic compounds</term><term>Instability</term><term>Magnetic field effects</term><term>Plasmons</term><term>Quantum magnetic field</term><term>Ternary compounds</term><term>Two-dimensional electron gas</term><term>Wave generation</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Génération onde</term><term>Plasmon</term><term>Transistor mobilité électron élevée</term><term>Transistor effet champ</term><term>Instabilité</term><term>Champ magnétique quantifiant</term><term>Effet champ magnétique</term><term>Gaz électron 2 dimensions</term><term>Composé ternaire</term><term>Gallium arséniure</term><term>Indium arséniure</term><term>Composé minéral</term><term>As Ga In</term><term>InGaAs</term><term>8530T</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A resonant voltage tuneable radiation (0.4 THz-1.0 THz) from the gated two dimensional electron gas in a 60 nm InGaAs field effect transistor was investigated. We show that (i) the observed emission appears once the drain-to-source voltage, U<sub>DS</sub>, exceeds the threshold value, U<sub>TH</sub>; (ii) the resonant frequency can be tuned by U<sub>DS</sub> in agreement with the current driven plasma instability model of Dyakonov and Shur; (iii) by applying a quantizing magnetic field one increases U<sub>TH</sub> linearly with the magnetic field while the evolution of the emission signal is approximately a universal function of (U<sub>DS</sub> - U<sub>TH</sub>).</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0031-8965</s0></fA01><fA02 i1="01"><s0>PSSABA</s0></fA02><fA03 i2="1"><s0>Phys. status solidi, A, Appl. res.</s0></fA03><fA05><s2>202</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Terahertz generation by plasma waves in nanometer gate high electron mobility transistors</s1></fA08><fA11 i1="01" i2="1"><s1>ŁUSAKOWSKI (J.)</s1></fA11><fA11 i1="02" i2="1"><s1>TEPPE (F.)</s1></fA11><fA11 i1="03" i2="1"><s1>DYAKONOVA (N.)</s1></fA11><fA11 i1="04" i2="1"><s1>MEZIANI (Y. 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